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Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com
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Circuit
Description
Absolute Maximum
Ratings
Electrical Characteristics
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The H11G1 and H11G2 are dual-in-line optically coupled isolators consisting
of a Gallium Arsenide infrared emitter coupled with an NPN silicon, darlington
connected, phototransistor which has an integral base-emitter resistor to
optimize switching speeds and elevated temperature characteristics. Surface Mount Option Available.
All electrical parameters are 100% tested by
manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings: (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering Temperature: Isolation Surge Voltage: Isolation Steady-State Voltage: |
-55°C to +150°C -55°C to +100°C 260°C (for 10s) 5656Vpeak, 4000Vrms (Input to Output) 5300Vpeak, 3750Vrms (Input to Output) |
Input LED | |
| Forward Current Continuous: Forward Current Peak: Forward Current Peak: Reverse Voltage: Power Dissipation: Derate Linearly: |
60mA (continuous) 0.5A (p.w. 300µs, 2% duty cycle) 3A (p.w. 1µs, 300Hz) 6V 100mW 1.33mW/°C above 25°C |
Output Darlington Connected Phototransistor | |
| Collector-Emitter Voltage: Collector-Base Voltage: Emitter-Base Voltage: Collector Current Continuous Forward: Collector Current Continuous Reverse: Power Dissipation: Derate Linearly: |
100V (H11G1); 80V (H11G2) 100V (H11G1); 80V (H11G2) 7V 150mA 10mA 150mW 2.0mW/°C above 25°C |
| INPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| VF | Forward Voltage | IF=10mA | 1.1 | 1.5 | V | |
| IR | Reverse Current | VR=3V | 10 | µA | ||
| Capacitance | V=0, f=1MHz | 50 | pF | |||
| DETECTOR | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | |||||
| H11G1 | IC=1.0mA, IF=0 | 100 | V | |||
| H11G2 | 80 | V | ||||
| V(BR)CBO | Collector-Base Breakdown Voltage | |||||
| H11G1 | IC=100µA, IF=0 | 100 | V | |||
| H11G2 | 80 | V | ||||
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE=100µA, IF=0 | 7 | V | ||
| ICEO | Collector-Emitter Dark Current | IF=0, - | ||||
| H11G1 | VCE=80V | 100 | nA | |||
| H11G2 | VCE=60V | nA | ||||
| H11G1 | VCE=80V, TA=80°C | 100 | µA | |||
| H11G2 | VCE=60V, TA=80°C | µA | ||||
| Capacitance | f=1MHz, VCE=10V | 6 | pF | |||
| COUPLED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| CTR | DC Current Transfer Ratio | IF=10mA, VCE=1V | 1000 | % | ||
| IF=1mA, VCE=5V | 500 | % | ||||
| VCE(SAT) | Collector-Emitter Saturation Voltage | IC=1mA, IF=1mA | 0.75 | 1.0 | V | |
| IC=50mA, IF=16mA | 0.85 | V | ||||
| RISO | Isolation Resistance | VIO=500Vdc | 100 | Gohm | ||
| CIO | Capacitance Input to Output | VIO=0, f=1MHz | 2 | pF | ||
| TON | Turn-On Time | IF=10mA, VCE=5V, RL=100ohm, (pulse width<=300µs, f<=30Hz) |
5 | µs | ||
| TOFF | Turn-Off Time | 100 | µs | |||
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