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H11A1, H11A2, H11A3 OPTICALLY COUPLED ISOLATORS

Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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Circuit

Features

2500 Volt Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package.

Description

The H11A1, H11A2, H11A3 are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL

Absolute Maximum Ratings: (Ta=25°C)
Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage:	-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case ± 2500V
Input Diode
Forward DC Current: Reverse DC Voltage: Peak Forward Current: Power Dissipation:	80mA 3V 3A (t p=10µs) 100mW (derate linearly 1.33mW/°C above 25°C)
Output Transistor
Collector-Emitter Voltage: Emitter-Collector Voltage: Collector-Base Voltage: Power Dissipation: Derate Linearly:	30V 7V 70V 150mW 2.00mW/°C above 25°C
Package
Total Power Dissipation: Derate Linearly:	250mW 3.3mW/°C above 25°C

Electro-optical Characteristics: (Ta=25°C)

INPUT	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
VF	Forward Voltage	IF=10mA			1.5	V
IR	Reverse Current	VR=3V			100	µA
VR	Reverse Breakdown Voltage	IR=10µA	3			V
OUTPUT	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
BVCEO	Collector-Emitter Voltage	IC=1mA	30			V
BVECO	Emitter-Collector Voltage	IE=100µA	7			V
BVCBO	Collector-Base Voltage	IC=100µA	70			V
ICEO	Collector-Emitter Dark Current
	H11A1, H11A2	VCE=10V, IB=0			50	nA
	H11A3				100	nA
ICBO	Collector-Base Dark Current	VCB=10V, IE=0			20	nA
CCE	Collector-Emitter Capacitance	VCE=0		10		pF
HFE		VCE=5.0V, IC=100µA		150
COUPLED	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
IC/IF	DC Current Transfer Ratio	IF=10mA, VCE=10V
	H11A1		50			%
	H11A2		20			%
	H11A3		10			%
RIO	Input-to-Output Isolation Resistance	VIO=500V, Note 1	1E11			ohm
VCE(SAT)	Collector-Emitter Saturation Voltage	IF=50mA, IC=2mA			0.5	V
CIO	Capacitance Input to Output	f=1MHz, Note 1		0.6		pf
tR	Output Rise Time	VCC=10V, IC=2mA		2		µs
tF	Output Fall Time	RL=100ohm		2		µs
	Input-Output Isolation Voltage	Note 1	2500			V

Notes

1. Measured with input leads shorted together and output leads shorted together.

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