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CNY17-1, CNY17-2, CNY17-3
OPTICALLY COUPLED ISOLATORS

Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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Circuit

Features

4400 Volt Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package.

Description

The CNY17 Series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL

Absolute Maximum Ratings (Ta=25°C)
Storage Temperature: Operating Temperature: Lead Soldering: Input-To-Output Isolation Voltage:	-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case ±4400Vdc (Note 1)
Input Diode
Forward DC Current: Reverse DC Voltage: Peak Forward Current: Power Dissipation: Derate Linearly:	60mA 6V 3A (1µs p.w. 300pps) 100mW 1.33mW/°C above 25°C
Output Transistor
Collector-Emitter Voltage: Emitter-Collector Voltage: Collector-Base Voltage: Power Dissipation:	70V 7V 70V 150mW
Package
Total Power Dissipation: Derate Linearly:	250mW 3.3mW/°C above 25°C

Electro-optical Characteristics (Ta=25°C)

INPUT	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
VF	Forward Voltage	IF=60mA
		Not CNY17-2A		1.2	1.65	V
		CNY17-2A		1.2	1.4	V
	Capacitance	VR=0, f=1MHz		30		pF
IR	Reverse Current	VR=6V			10	µA
VR	Reverse Breakdown Voltage	IR=100µA	6			V
OUTPUT	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
BVCEO	Collector-Emitter Voltage	IC=1mA, IB=0	30			V
BVECO	Emitter-Collector Voltage	IE=100µA, IC=0	5			V
BVCBO	Collector-Base Voltage	IC=100µA				V
ICEO	Collector-Emitter Dark Current	VCE=10V, IB=0			100	nA
COUPLED	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
IC/IF	DC Current Transfer Ratio
	CNY17-1	IF=10mA, VCE=5V	40		80	%
	CNY17-2		63		125	%
	CNY17-2A		40		200	%
	CNY17-3		100		200	%
RIO	Input-to-Output Isolation Resistance	VIO=500V, (note 1)	100			Gohm
VCE(SAT)	Collector-Emitter Saturation Voltage	IF=10mA, IC=2.5mA		0.2	0.4	V
CIO	Capacitance Input to Output	f=1MHz (note 1)		0.6		pF
TR	Output Rise Time	IF=10mA, VCC=5.0V		2	4	µs
TON	Output Turn-on Time	RL=75ohm, TA=25°C		3	5.6	µs
TF	Output Fall Time			2	3.5	µs
TOFF	Output Turn-off Time			2.5	4.1	µs

Notes

1. Measured with input leads shorted together and output leads shorted together.

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