Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055

6N137
LSTTL/TTL Compatible High Speed Opto-Isolator

Circuit and Package
Features
Description
Recommended Operating Conditions
Absolute Maximum Ratings
Electrical Characteristics
Switching Characteristics

Similar Optocouplers
Home Page

---

Circuit and Package

	Units: mm		DIL
		a	0-13 degrees
		b	6.10-6.60
		d	2.54 Typ
		f	3.29 min
		h	3.25-3.75
		k	0.48-0.56 (tip), 1.1-1.4 (shoulder)
		l	9.40-9.90
		s	7.62 typ (shoulder)
		x	0.20-0.30

Features

LSTTL/TTL Compatible: 5V Supply
Ultra High Speed
Low Input Current Required
High Common Mode Rejection
Guaranteed Performance over Temperature
3000 Vdc Withstand Test Voltage

Description

The 6N137 consists of a GaAsP emitting diode and a unique integrated detector. The photons are collected in the detector by the photodiode and then amplified by a high gain linear amplifier that drives a Schottky clamped open collector output transistor. The circuit is temperature, current and voltage compensated.
This unique isolator design provides maximum DC and AC circuit isolation between input and output while achieving LSTTL/TTL circuit compatibility. The isolator operational parameters are guaranteed from 0°C to 70°C, such that a minimum input current of 5mA will sink an eight gate fan-out (13mA) at the output with 5 volt Vcc applied to the detector. This isolation and coupling is achieved with a typical propagation delay of 45ns. The enable input provides gating of the detector with input sinking and sourcing requirements compatible with LSTTL/TTL interfacing and a propagation delay of 25ns typical. Surface Mount Option Available.
All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings (25°C)
Storage Temperature:	-55°C to +125°C
Operating Temperature:	0°C to +70°C
Lead Soldering:	260°C for 10s, 1.6mm below seating plane
Input Diode
Peak Forward Current IF:	40mA (duration <= 1ms)
Average Forward Current IF:	20mA
Reverse Voltage VR:	5V
Enable Voltage:	5.5V (not to exceed Vcc by more than 500mV)
Output Transistor
Supply Voltage VCC	7V (1 minute max)
Current IO:	50mA
Voltage VO	7V
Collector Power Dissipation:	85mW

Recommended Operating Conditions

PARAMETER	SYMBOL	MIN	MAX	UNIT
Input Current, Low Level (each channel)	IFL	0	250	µA
Input Current, High Level (each channel)	IFH	6.3 (*)	15	mA
High Level Enable Voltage	VEH	2.0	VCC	V
Low Level Enable Voltage (output high)	VEL	0	0.8	V
Supply Voltage, Output	VCC	4.5	5.5	V
Fan Out (TTL Load)	N		8
Operating Temperature	TA	-55	70	°C

* 6.3mA condition permits at least 20% CTR degradation guardband. Initial switching threshold is 5mA or less.

Electrical Characteristics (Over recommended temperature Ta= 0°C to 70°C u.o.s.; all typical values at Vcc=5V, Ta=25°C u.o.s.)
SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT	NOTES
IOH	High Level Output Current	VCC=VO=5.5V, VE=2.0V, IF=250µA		50	250	µA
VOL	Low Level Output Voltage	VCC=5.5V, IF=5mA, VEH=2.0V, IOL(SINKING)=13mA		0.5	0.6	V
IEH	High Level Enable Current	VCC=5.5V, VE=2.0V		-1		mA
IEL	Low Level Enable Current	VCC=5.5V, VE=0.5V		-1.6		mA
ICCH	High Level Supply Current	VCC=5.5V, VE=0.5V, IF=0mA		7	15	mA
ICCL	Low Level Supply Current	VCC=5.5V, VE=0.5V, IF=10mA		13	18	mA
IIO	Input-Output Insulation Leakage Current	TA=25°C, RH=45%, t=5s, VIO=3000Vdc			1.0	µA	3
RIO	Resistance	TA=25°C, VIO=500V		1000		Gohm	3
CIO	Capacitance	TA=25°C, f=1MHz		0.6		pF	3
VF	Input Forward Voltage	TA=25°C, IF=10mA		1.5	1.75	V	6
BVR	Input Reverse Breakdown Voltage	TA=25°C, IR=10µA	5			V
CIN	Input Capacitance	VF=0, f=1MHz		60		pF
CTR	Current Transfer Ratio	IF=5mA, RL=100ohm		700		%	5
Switching Characteristics (Ta=25°C, Vcc=5V)
SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT	NOTES
tPLH	Propagation Delay Time to High Output Level	RL=350ohm, IF=7.5mA, CL=15pF		45	75	µs	1
tPHL	Propagation Delay Time to Low Output Level	RL=350ohm, IF=7.5mA, CL=15pF		45	75	µs	1
tR-tF	Output Rise-Fall Time (10-90%)	RL=350ohm, IF=7.5mA, CL=15pF		25		ns
tELH	Propagation Delay Time of Enable from VEH to VEL	RL=350ohm, IF=7.5mA, CL=15pF, VEH=3.0V, VEL=0.5V		65		ns	2
tEHL	Propagation Delay Time of Enable from VEL to VEH			15		ns	2
CMH	Common Mode Transient Immunity at Logic High Output Level	RL=350ohm, IF=0mA, VCM=10V, VO(MIN)=2V		50		V/µs	4
CML	Common Mode Transient Immunity at Logic Low Output Level	RL=350ohm, IF=5mA, VCM=10V, VO(MAX)=0.8V		-150		V/µs	4

Notes

1. The tPLH (tPHL) propagation delay is measured from the 3.75mA point on the trailing (leading) edge of the input pulse to the 1.5V point on the trailing (leading) edge of the output pulse.
2. The tELH (tEHL) enable propagation delay is measured from the 3.75mA point on the trailing (leading) edge of the input pulse to the 1.5V point on the trailing (leading) edge of the output pulse.
3. Device considered as two-terminaled: pins 2,3 shorted together and pins 5,6,7,8 shorted together.
4. Common mode transient immunity in Logic High (Low) Level is the maximum tolerable, positive (negative), dVcm/dt on the leading (trailing) edge of the common mode pulse signal, Vcm, to ensure that the output will remain in a Logic High (Low) state, ie. Vo>2.0V (Vo<0.8V).
5. DC Current Transfer Ratio is defined as the ratio of the output collector current to the forward bias input current times 100%.
6. At 10mA, Vf decreases with increasing temperature at the rate of 1.6mV/°C.

Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date.